Project name: Wide Bandgap Semiconductor Function Materials and Power Device Industrialization Project of Beijing Century Goldray Semiconductor Co., Ltd. (mechanical and electrical installation engineering of clean rooms on the first and second floors, Building 3)

Engineering site: No. 17, Tonghuiganqu Road, Economic and Technological Development Zone, Beijing

Construction unit: Beijing Century Goldray Semiconductor Co., Ltd.

Engineering content: this project is the internal transformation of existing building. The first, second and third floors of existing Building 4 and some areas of the first, second, third and fourth floors of power station are transformed. Engineering content includes sundry clean of factory, equipment foundations and dynamic equipment foundations required by special equipments of decoration engineering, ventilating air conditioning engineering, water supply and drainage engineering, mechanical and electrical installation engineering.